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| SI4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Solution for Bi-Directional Blocking Bi-Directional Conduction Switch D 6- to 30-V Operation D Ground Referenced Logic Level Inputs D Integrated Low rDS(on) MOSFET D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State (Leakage Current Only) D Logic Supply Voltage is Not Required DESCRIPTION The SI4710CY is a level-shifted p-channel MOSFET. Operating two in a series, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The SI4710CY is available in a 8-pin SOIC package and is rated for the commercial temperature range of -25 to 85_C. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 2 G IN 1 5, 6, 7 D ESD Logic and Gate Drive Level Shift GND 8 VGS Limiter Half a circuit shown here. 3, 4 S Document Number: 71106 S-99585--Rev. A, 20-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI4710CY Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS Voltage Referenced to GND VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 30 V VSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 15 V VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 W (t = steady state) . . . . . . . . . . . . . . . . . . . . . . . 1.4 W Thermal Resistance Max Junction-Ambientb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 55 C/W (t = steady state) . . . . . . . . . . . . . . . . . . . . . 90 C/W Max Junction-Foot (t = steady state) . . . . . . . . . . . . . . . . . . . . . 27 C/W Notes a. VSD 30 VDC b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V IDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to 85_C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to 150_C SPECIFICATIONS Limits Parameter P Symbol S bl Specific T S ifi Test Conditions C di i Tempa Minb Typc Maxb Unit On-Resistance Leakage Current rDS IDS(off) IS GND(off) IS GND(on) VINL VINH IINH tON(IN) tOFF(IN) tRISE tFALL VGS VSD VS = 10 V, ID = 1 A, VIN = H VDS = 10 V Room Room Room 0.014 0.018 1 1 W Power Consumption VS = 17 V Room VS = 10 V VIN = 5.0 V Full Full Full Room VS = 10 V, RL = 5 W, Test Circuit 1 V W T Ci i Room Room Room VS = 30 V ID = -1 A Room Room 3.0 1.5 1.25 50 10.2 2.5 5 6 3 3 150 18 1.1 1.1 6 0.8 mA A Input Voltage Low Input Voltage High Input Leakage Current Turn-On Delay Turn-Off Delay Rise Time Fall Time Voltage Across Pin 6 and 7 Forward Diode IN to t D or S V mA ms ns V Notes a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71106 S-99585--Rev. A, 20-Dec-98 SI4710CY New Product TIMING DIAGRAMS Vishay Siliconix 10 V SOURCE VIN 0V 50% 50% DRAIN VD 5W tON(IN) 90% 10% tOFF(IN) tr 90% 10% tf TEST CIRCUIT 1 PIN CONFIGURATION SO-8 IN G S S 1 2 3 4 8 7 6 5 GND D TRUTH TABLE VIN 0 D 0 D 1 1 Off On On Switch Off Order Number: SI4710CY PIN DESCRIPTION Pin Number 5, 6 8 1 2 3, 4 Symbol D GND IN G S Ground Description Drain connection for MOSFET. Logic input, IN. High level turns on the switch. Gate output to MOSFET. Source connection for MOSFET. Document Number: 71106 S-99585--Rev. A, 20-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI4710CY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - Drain-Source On-Resistance ( W ) r DS(on) - Drain-Source On-Resistance ( W ) 0.10 On-Resistance vs. Source Voltage 0.025 0.08 0.020 VS = 10 V 0.015 0.06 0.04 IS = 1 A 0.02 0.010 0.005 0.000 0 1 2 3 IS (A) 4 5 6 0 0 4 8 VS (V) 12 16 20 Normalized On-Resistance vs. Junction Temperature 1.8 1.6 r DS(on) - On-Resistance ( W ) (Normalized) 1.4 C OSS (pF) 1.2 1.0 0.8 500 0.6 0.4 -50 0 -25 0 25 50 75 100 125 150 0 1500 VS = 10 V IS = 1 A 2000 2500 Output Capacitance vs. Source Voltage 1000 VIN = 0 V 5 10 15 VS (V) 20 25 30 TJ - Junction Temperature (_C) Off-Supply Current vs. Source Voltage 10.000 TJ = 150_C 1.000 I S ( mA) I S ( mA) 1.000 10.000 On-Supply Current vs. Source Voltage TJ = 150_C TJ = 25_C 0.100 0.100 0.010 TJ = 25_C 0.010 0.001 0 5 10 15 VS (V) 20 25 30 0.001 0 5 10 15 VS (V) 20 25 30 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71106 S-99585--Rev. A, 20-Dec-98 SI4710CY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Drain-Source Diode Forward Voltage 10 1.8 Vishay Siliconix Input Voltage Trip Point vs. Temperature 1.6 I S - Source Current (A) TJ = 150_C V IN Trip Point 1.4 VS = 21 V VS = 10 V 1.2 TJ = 25_C 1.0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.8 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TA = Ambient Temperature (_C) Turn-On Delay vs. Temperature 4.0 2.0 Turn-off Delay vs. Temperature VS = 10 V Rl = 5 W 1.8 VS = 10 V Rl = 5 W 3.6 3.2 t d(on) ( m s) t d(on) ( m s) 1.6 2.8 1.4 2.4 1.2 2.0 -50 -25 0 25 50 75 100 125 150 1 -50 -25 0 25 50 75 100 125 150 Temperature (_C) Temperature (_C) Rise Time vs. Temperature 1.8 80 Fall Time vs. Temperature VS = 10 V Rl = 5 W 1.6 VS = 10 V Rl = 5 W 70 1.4 t rise ( m s) ( ns) 60 1.2 50 t fall 1.0 40 0.8 30 0.6 -50 -25 0 25 50 75 100 125 150 20 -50 -25 0 25 50 75 100 125 150 Temperature (_C) Temperature (_C) Document Number: 71106 S-99585--Rev. A, 20-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI4710CY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 100 100 Single Pulse Power, Junction-to-Foot 80 80 Power (W) 40 Power (W) 60 60 40 20 20 0 0.001 0.01 0.1 Time (sec) 1 10 0 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 63_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 71106 S-99585--Rev. A, 20-Dec-98 SI4710CY New Product APPLICATION DRAWINGS Vishay Siliconix AC/DC SI4710CY SI4710CY 5, 6, 7 3, 4 3, 4 5, 6, 7 Display Power Charger Logic In 1 Drive 2 2 1 Drive Logic In SI4710CY SI4710CY Si6415 3, 4 5, 6, 7 5, 6, 7 3, 4 2 1 Battery-A Drive Logic In Logic In 1 Drive 2 SI4710CY SI4710CY Si6415 3, 4 5, 6, 7 5, 6, 7 3, 4 2 1 Battery-B Drive Logic In Logic In 1 Drive 2 Figure 1: High-Performance Laptop PC Document Number: 71106 S-99585--Rev. A, 20-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-7 SI4710CY Vishay Siliconix APPLICATION DRAWINGS New Product SI4710CY Si4435DY 5, 6, 7 3, 4 Battery-A Logic In 1 Drive 2 SI4710CY Si4435DY 5, 6, 7 3, 4 Battery-B Logic In 1 Drive 2 5V 3.3 V DC-DC Converter Figure 2: AC/DC Charger SI4710CY SI4710CY Display Power 5, 6, 7 3, 4 5, 6, 7 3, 4 2 1 1 2 Battery Logic In Drive Logic In Drive 5V DC-DC Converter 3.3 V Figure 3: Low-Cost Laptop PC www.vishay.com S FaxBack 408-970-5600 2-8 Document Number: 71106 S-99585--Rev. A, 20-Dec-98 SI4710CY New Product APPLICATION DRAWINGS Vishay Siliconix SI4710CY 5-V Output 5, 6, 7 3, 4 3.3 V 2 1 Logic In Drive DC-DC Converter SI4710CY 3.3-V Output 5, 6, 7 3, 4 5V 2 1 Logic In Drive Figure 4: ACPI Power Saving Switcher Document Number: 71106 S-99585--Rev. A, 20-Dec-98 www.vishay.com S FaxBack 408-970-5600 2-9 |
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